Product Summary
The 4n35m is a general purpose 6-pin phototransistor optocoupler. It consists of a gallium arsenide infrared emitting diode driving a silicon phototransistor in a 6-pin dual in-line package. The applications of the 4n35m include: Power supply regulators, Digital logic inputs, Microprocessor inputs.
Parametrics
4n35m absolute maximum ratings: (1)Storage Temperature TSTG: -55 to +150 ℃; (2)Operating Temperature TOPR: -55 to +100 ℃; (3)Wave solder temperature TSOL: 260 ℃ for 10 sec; (4)Total Device Power Dissipation @ TA = 25℃ PD: 250mW; Derate above 25℃: 2.94 mW; (5)DC/Average Forward Input Current IF: 60 mA; (6)Reverse Input Voltage VR: 6 V; (7)Forward Current - Peak (300μs, 2% Duty Cycle) IF(pk): 3 A; (8)LED Power Dissipation @ TA = 25℃ PD: 120 mW; Derate above 25℃: 1.41 mW/℃.
Features
4n35m features: (1)UL recognized (File # E90700); (2)VDE recognized (File # 102497) - Add option V (e.g., 4N25VM).
Diagrams
Image | Part No | Mfg | Description | ![]() |
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![]() 4N35M |
![]() Fairchild Semiconductor |
![]() Transistor Output Optocouplers Optocoupler Phototransistor |
![]() Data Sheet |
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![]() 4N35M_F132 |
![]() Fairchild Semiconductor |
![]() Transistor Output Optocouplers Phototransistor Output |
![]() Data Sheet |
![]() Negotiable |
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![]() 4N35M-V |
![]() Everlight |
![]() Transistor Output Optocouplers Optocouplers |
![]() Data Sheet |
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