(China (Mainland))
Product Summary
The h11f3sr2m is a photo FET optocoupler. It consists of a Gallium-Aluminum-Arsenide IRED emitting diode coupled to a symmetrical bilateral silicon photo-detector. The detector is electrically isolated from the input and performs like an ideal isolated FET designed for distortion-free control of low level AC and DC analog signals. The h11f3sr2m is mounted in dual in-line packages. The applications of the h11f3sr2m include: Isolated variable attenuator, Automatic gain control, Active filter fine tuning/band switching, Isolated sample and hold circuit, Multiplexed, optically isolated A/D conversion.
Parametrics
h11f3sr2m absolute maximum ratings: (1)TSTG Storage Temperature: -55 to +150℃; (2)TOPR Operating Temperature: -40 to +100℃; (3)TSOL Lead Solder Temperature: 260℃ for 10 sec; (4)IF Continuous Forward Current: 60mA; (5)VR Reverse Voltage: 5V; (6)IF(pk) Forward Current – Peak (10 μs pulse, 1% duty cycle): 1A; (7)PD LED Power Dissipation 25℃ Ambient: 100mW, Derate Linearly from 25℃: 1.33mW/℃.
Features
h11f3sr2m features: (1)Extremely low offset voltage; (2)60 Vpk-pk signal capability; (3)No charge injection or latch-up; (4)ton, toff≤15μS; (5)UL recognized (File #E90700).
Diagrams
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 H11F3SR2M |
Fairchild Semiconductor |
Transistor Output Optocouplers FET Bilateral analog |
Data Sheet |
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Transistor Output Optocouplers Optocoupler FET Bilateral analog |
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Transistor Output Optocouplers Optocoupler FET Bilateral analog |
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Transistor Output Optocouplers Optocoupler FET Bilateral analog |
Data Sheet |
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