Product Summary

The ild213e2t is a dual phototransistor. Signal information, including a DC level, can be transmitted by the device while maintaining a high degree of electrical isolation between input and output. The ild213e2t comes in a standard SOIC-8 small outline package for surface mounting which makes it ideally suited for high density applications with limited space. In addition to eliminating through-holes requirements, this package conforms to standards for surface mounted devices.

Parametrics

ild213e2t absolute maximum ratings: (1)Peak Reverse Voltage: 6.0 V; (2)Peak Pulsed Current (1μs, 300 pps): 1 A; (3)Continuous Forward Current per Channel: 30 mA; (4)Power Dissipation at 25℃: 45 mW; (5)Derate Linearly from 25℃: 0.5 mW/℃; (6)Total Package Dissipation at 25℃ Ambient(2 LEDs + 2 Detectors, 2 Channels): 200 mW; (7)Derate Linearly from 25℃: 2.0 mW/℃; (8)Storage Temperature: –55℃ to +150℃; (9)Operating Temperature: –55℃ to +100℃; (10)Soldering Time at 260℃: 10 sec.

Features

ild213e2t features: (1)Two Channel Coupler; (2)Industry Standard SOIC-8 Surface Mountable Package; (3)Standard Lead Spacing of .05”; (4)Available in Tape and Reel Option(Conforms to EIA Standard 481-2); (5)Isolation Test Voltage, 2500 VRMS; (6)High Current Transfer Ratios; (7)High BVCEO, 70 V; (8)Compatible with Dual Wave, Vapor Phase and IR Reflow Soldering.

Diagrams

ild213e2t dimensions

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