(China (Mainland))
Product Summary
The EL357E is a Photocoupler. It contains a gallium arsenic infrared emitting diode optically coupled to a phototransistor. It is packaged in a 4-pin SMD package. The applications of the EL357E include: Hybrid substrates that require high density mounting, Programmable controllers, System appliances, measuring instruments, Telecommunication, Electric home appliances, such as fan heaters, etc., Signal transmission between circuits of different potentials and impedances.
Parametrics
EL357E absolute maximum ratings: (1)Forward Current IF: 50 mA; (2)Input Reverse Voltage VR: 6 V; (3)Power Dissipation P: 70 mW; (4)Collector Power Dissipation PC: 150 mW; (5)Output Collector Current IC: 50 mA; (6)Collector-Emitter Voltage VCEO: 35 V; (7)Emitter-Collector Voltage VECO: 6 V; (8)Total Power Dissipation Ptot: 200 mW; (9)Isolation Voltage Viso: 3750 V rms; (10)Operating Temperature Topr: -55~+100 ℃; (11)Storage Temperature Tstg: -55~+125 ℃; (12)Soldering Temperature Tsol: 260 ℃.
Features
EL357E features: (1)Current transfer ratio(CTR:MIN.50% at IF =5mA ,VCE =5V); (2)Isolation voltage between input and output(E357: Viso=3750 Vrms ); (3)Subminiature type(The volume is small than that of conventional DIP type by as far as 30%); (4)Mini-flat package EL357:1-channel type; (5)Pb free; (6)The product itself will remain within RoHS compliant version.
Diagrams
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EL354(A)-V |
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