Product Summary
The Supertex 2N6660 is an enhancement-mode(normallyoff) transistor that utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. The applications of the 2N6660 are Motor controls, Converters, Amplifiers, Switches, Power supply circuits, Drivers (relays, hammers, solenoids, lamps, memories, displays, bipolar transistors, etc.).
Parametrics
2N6660 absolute maximum ratings: (1)Drain-to-source voltage: BVDSS; (2)Drain-to-gate voltage: BVDGS; (3)Gate-to-source voltage: ±20V; (4)Operating and storage temperature: -55°C to +150°C.
Features
2N6660 features: (1)Free from secondary breakdown; (2)Low power drive requirement; (3)Ease of paralleling; (4)Low CISS and fast switching speeds; (5)Excellent thermal stability; (6)Integral source-drain diode; (7)High input impedance and high gain; (8)Hi-Rel processing available.
Diagrams
Image | Part No | Mfg | Description | Pricing (USD) |
Quantity | |||||||||||||
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2N6660 |
Supertex |
MOSFET 60V 3Ohm |
Data Sheet |
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2N6660-E3 |
Vishay/Siliconix |
MOSFET 60V 0.99A |
Data Sheet |
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2N6660X |
Other |
Data Sheet |
Negotiable |
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