(China (Mainland))
Product Summary
The EL814A is a 4 PIN DIP phototransistor. It consists of two infrared emitting diodes, connected in inverse parallel, optically coupled to a phototransistor detector. The EL814A is packaged in a 4-pin DIP package and available in wide-lead spacing and SMD option. The applications of the EL814A include: AC line monitor, Programmable controllers, Telephone line interface, Unknown polarity DC sensor.
Parametrics
EL814A absolute maximum ratings: (1)Input Forward current IF: ±50 mA; (2)Peak forward current (t = 10μs) IFM: 1 A; (3)Power dissipation PD: 70mW; Derating factor (above 100 ℃): 2.9 mW/℃; (4)Output Collector-Emitter voltage VCEO: 80 V; (5)Output Emitter-Collector voltage VECO: 6 V; (6)Total power dissipation Ptot: 200 mW; (7)Isolation voltage Viso: 5000 V rms; (8)Operating temperature Topr: -55~+110 ℃; (9)Storage temperature Tstg: -55~+125 ℃; (10)Soldering temperature Tsol: 260 ℃.
Features
EL814A features: (1)AC input response; (2)Current transfer ratio(CTR: Min. 20% at IF =±1mA ,VCE =5V); (3)High isolation voltage between input and output (Viso=5000 V rms); (4)Wide Operating temperature range: -55~110℃; (5)High collector-emitter voltage VCEO=80V; (6)Compact dual-in-line package; (7)Pb free and RoHS compliant; (8)UL approved (No. E214129); (9)VDE approved (No. 132249); (10)SEMKO approved (No. 716108); (11)NEMKO approved (No. P06206474); (12)DEMKO approved (No. 313924); (13)FIMKO approved (No. FI 22807); (14)CSA approved (No. 1143601).
Diagrams
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