Product Summary
The 2n5322 is a silicon epitaxial planar PNP transistor in Jedec TO-39 metal case. The 2n5322 is especially intended for high-voltage medium power application in industrial and commercial equipments. The complementary NPN types is a respectively the 2n5322.
Parametrics
2n5322 absolute maximum ratings: (1)Collector-Base Voltage (IE = 0): -100V -75 V; (2)Collector-Emitter Voltage (VBE = -1.5V): -100V -75 V; (3)Collector-Emitter Voltage (IB = 0): -75V -50 V; (4)Emitter-Base Voltage (IC = 0): -6V -5 V; (5)Collector Current: -1.2 A; (6)Collector Peak Current:-2 A; (7)Base Current: -1 A; (8)Total Dissipation at Tamb = 25 °C 1 W; (9)Total Dissipation at Tc = 25 °C 10 W; (10)Tj Storage and Junction Temperature: -65 to 200 °C.
Features
2n5322 features: (1)silicon epitaxial planar pnp transistors; (2)medium power amplifier; (3)npn complements is a 2n5322.
Diagrams
Image | Part No | Mfg | Description | Pricing (USD) |
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2N5322 |
Central Semiconductor |
Transistors Bipolar (BJT) PNP 75V 2A |
Data Sheet |
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Image | Part No | Mfg | Description | Pricing (USD) |
Quantity | |||||||||||||
2N5322 |
Central Semiconductor |
Transistors Bipolar (BJT) PNP 75V 2A |
Data Sheet |
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2N5306_Q |
Fairchild Semiconductor |
Transistors Darlington NPN Transistor Darlington |
Data Sheet |
Negotiable |
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2N5302G |
ON Semiconductor |
Transistors Bipolar (BJT) 30A 60V 200W NPN |
Data Sheet |
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2N5302 |
ON Semiconductor |
Transistors Bipolar (BJT) 30A 60V 200W NPN |
Data Sheet |
Negotiable |
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2N5301 |
Central Semiconductor |
Transistors Bipolar (BJT) NPN Hi-Pwr Amp |
Data Sheet |
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2N5339 |
Central Semiconductor |
Transistors Bipolar (BJT) NPN High Current |
Data Sheet |
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