(China (Mainland))
Product Summary
The mocd223r1m is a dual channel phototransistor. It consists of two gallium arsenide infrared emitting diodes optically coupled to two monolithic silicon phototransistor darlington detectors, in a surface mountable, small outline plastic package. The mocd223r1m is ideally suited for high density applications that require low input current and eliminates the need for through-the-board mounting. The applications of the mocd223r1m include: Interfacing and coupling systems of different potentials and impedances, General purpose switching circuits, Monitor and detection circuits.
Parametrics
mocd223r1m absolute maximum ratings: (1)Collector-Emitter Voltage VCEO: 30 V; (2)Collector-Base Voltage VCBO: 70 V; (3)Emitter-Collector Voltage VECO: 7.0 V; (4)Collector Current-Continuous IC: 150 mA; (5)Detector Power Dissipation @ TA = 25℃ PD: 150 mW; Derate above 25℃: 1.76 mW/℃; (6)Input-Output Isolation Voltage(f = 60 Hz, t = 1 min. Duration)VISO: 2500 Vac(rms); (7)Ambient Operating Temperature Range TA: -40 to +100 ℃; (8)Storage Temperature Range Tstg: -40 to +150 ℃; (9)Lead Soldering Temperature(1/16 from case, 10 sec. duration) TL: 260 ℃.
Features
mocd223r1m features: (1)U.L. Recognized (File #E90700, Volume 2); (2)VDE Recognized (File #13616) (add option V for VDE approval, i.e, MOCD223V-M); (3)Convenient Plastic SOIC-8 Surface Mountable Package Style; (4)High Current Transfer Ratio of 500% Minimum at IF= 1 mA; (5)Minimum BVCEO of 30 Volts Guaranteed; (6)Standard SOIC-8 Footprint, with 0.050 Lead Spacing; (7)Compatible with Dual Wave, Vapor Phase and IR Reflow Soldering; (8)High Input-Output Isolation Voltage of 2500 V AC(rms) Guaranteed.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||||||||||
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 MOCD223R1M |
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Data Sheet |
Negotiable |
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Negotiable |
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MOCD207R1M |
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Data Sheet |
Negotiable |
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